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1/15 october 2004 stp200nf04 stb200nf04 - stb200nf04-1 n-channel 40v - 120 a - 3.3 m ? to-220/d2pak/i2pak stripfet?ii mosfet table 1: general features standard threshold drive 100% avalanche tested description this mosfet is the latest development of stmi- croelectronics unique ?single feature size?? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications high current, high switching speed automotive table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw stb200nf04 stb200nf04-1 stp200nf04 40 v 40 v 40 v < 0.0037 ? < 0.0037 ? < 0.0037 ? 120 a 120 a 120 a 310 w 310 w 310 w 1 2 3 d 2 pak to-220 1 3 1 2 3 i 2 pak sales type marking package packaging stb200nf04t4 b200nf04 d 2 pak tape & reel stb200nf04-1 b200nf04 i 2 pak tube stp200nf04 p200nf04 to-220 tube rev. 3
stp200nf04 - stb200nf04 - stb200nf04-1 2/15 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 120a, di/dt 500a/s, v dd v (br)dss , t j t jmax. (2) starting t j = 25 c, i d = 60a, v dd =30 v (#) current limited by package table 4: thermal data electrical characteristics (t case =25 c unless otherwise specified) table 5: on/off symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v dgr drain-gate voltage (r gs = 20 k ? ) 40 v v gs gate- source voltage 20 v i d (#) drain current (continuos) at t c = 25 c 120 a i d (#) drain current (continuos) at t c = 100 c 120 a i dm ( ) drain current (pulsed) 480 a p tot total dissipation at t c = 25 c 310 w derating factor 2.07 w/ c dv/dt (1) peak diode recovery voltage slope 1.5 v/ns e as (2) single pulse avalanche energy 1.3 j t j t stg operating junction temperature storage temperature -55 to 175 c to-220 / i 2 pa k / d 2 pa k rthj-case thermal resistance junction-case max 0.48 c/w rthj-pcb thermal resistance junction-pcb max (see figure 17) c/w rthj-amb thermal resistance junction-ambient (free air) max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 24v r ds(on) static drain-source on resistance v gs = 10v, i d = 90 a 3.3 3.7 m ?
3/15 stp200nf04 - stb200nf04 - stb200nf04-1 electrical characteristics (continued) table 6: dynamic table 7: switching on/off table 8: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 90 a 150 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 5100 1600 600 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 20 v, i d = 90 a r g =4.7 ? v gs = 10 v (see figure 20) 30 320 140 120 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20v, i d = 120 a, v gs = 10v (see figure 23) 170 30 62 210 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 120 480 a a v sd (1) forward on voltage i sd = 120 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a, di/dt = 100a/s v dd = 30v, t j = 150 c (see figure 21) 85 190 4.5 ns nc a
stp200nf04 - stb200nf04 - stb200nf04-1 4/15 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/15 stp200nf04 - stb200nf04 - stb200nf04-1 figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: dource-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature figure 14: normalized breakdown voltage vs temperature
stp200nf04 - stb200nf04 - stb200nf04-1 6/15 figure 15: thermal resistance rthj-a vs pcb copper area figure 16: max power dissipation vs pcb cop- per area
7/15 stp200nf04 - stb200nf04 - stb200nf04-1 figure 17: allowable lav vs. time in avalanche the previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: p d(ave) = 0.5 * (1.3 * bv dss * i av ) e as(ar) = p d(ave) * t av where: i av is the allowable current in avalanche p d(ave) is the average power dissipation in avalanche (single pulse) t av is the time in avalanche to derate above 25 c, at fixed i av, the following equation must be applied: i av = 2 * (t jmax - t case ) / (1.3 * bv dss * z th ) where: z th = k * r th is the value coming from normalized thermal response at fixed pulse width equal to t av .
stp200nf04 - stb200nf04 - stb200nf04-1 8/15 table 9: 6th order rc network figure 18: schematic of 6th order rc network parameter node value ctherm1 1 - 2 1.4958e-3 ctherm2 2 - 3 3.5074e-2 ctherm3 3 - 4 5.939e-2 ctherm4 4 - 5 9.7411e-2 ctherm5 5 - 6 8.8596e-2 ctherm6 6 - 7 8.2755e-1 rtherm1 1 - 2 0.0384 rtherm2 2 - 3 0.0624 rtherm3 3 - 4 0.072 rtherm4 4 - 5 0.0912 rtherm5 5 - 6 0.1008 rtherm6 6 - 7 0.1152 spice thermal model
9/15 stp200nf04 - stb200nf04 - stb200nf04-1 figure 19: unclamped inductive load test cir- cuit figure 20: switching times test circuit for resistive load figure 21: test circuit for inductive load switching and diode recovery times figure 22: unclamped inductive wafeform figure 23: gate charge test circuit
stp200nf04 - stb200nf04 - stb200nf04-1 10/15 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
11/15 stp200nf04 - stb200nf04 - stb200nf04-1 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3
stp200nf04 - stb200nf04 - stb200nf04-1 12/15 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
13/15 stp200nf04 - stb200nf04 - stb200nf04-1 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp200nf04 - stb200nf04 - stb200nf04-1 14/15 table 10: revision history date revision description of changes 28-sep-2004 2 new stylesheet. no content change 11-oct-2004 3 final datasheet
15/15 stp200nf04 - stb200nf04 - stb200nf04-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

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